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Solid-state imaging apparatus

Appareil d'imagerie à semi-conducteur

Abstract

In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.

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Cited By (4)

    Publication numberPublication dateAssigneeTitle
    EP-2866260-A3August 26, 2015Canon Kabushiki KaishaSolid-state imaging apparatus, method for manufacturing the same, and imaging system
    EP-3067931-A1September 14, 2016Canon Kabushiki KaishaPixel, dispositif d'imagerie à semi-conducteurs et appareil d'imagerie
    RU-2589519-C2July 10, 2016Кэнон Кабусики КайсяSolid-state imaging device, method of making said device and imaging system
    US-9761618-B2September 12, 2017Canon Kabushiki KaishaSolid-state imaging apparatus, method for manufacturing the same, and imaging system