Vorrichtung und Verfahren zur Plasmaverarbeitung

Plasma processing apparatus and method

Appareil et procédé de traitement de plasma

Abstract

A plasma etching apparatus includes an upper electrode (34) and a lower electrode (16), between which plasma of a process gas is generated to perform plasma etching on a wafer (W). The apparatus further comprises a variable DC power supply (50) to apply a DC voltage to the upper electrode (34), so as to cause the absolute value of a self-bias voltage V dc on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode (34) side to generate predetermined pressed plasma.

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Patent Citations (3)

    Publication numberPublication dateAssigneeTitle
    JP-2000173993-AJune 23, 2000Hitachi Ltd, Tokyo Electron Ltd, 東京エレクトロン株式会社, 株式会社日立製作所プラズマ処理装置およびエッチング方法
    JP-2002270586-ASeptember 20, 2002Tokyo Electron Ltd, 東京エレクトロン株式会社有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
    JP-2004087875-AMarch 18, 2004Tokyo Electron Ltd, 東京エレクトロン株式会社Etching method of insulating film

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Cited By (1)

    Publication numberPublication dateAssigneeTitle
    US-9799494-B2October 24, 2017Tokyo Electron LimitedEnergetic negative ion impact ionization plasma